ty semiconductor reliability handbook (?handling SSM3J304T ? 1.8 v drive ? low on-resistance: r on = 297 m ? (max) (@v gs = -1.8 v) r on = 168 m ? (max) (@v gs = -2.5 v) r on = 127 m ? (max) (@v gs = -4.0 v) absolute maximum ratings (ta = 25 ? c) characteristic symbol rating unit drain-source voltage v ds -20 v gate-source voltage v gss 8 v dc i d -2.3 drain current pulse i dp -4.6 a drain power dissipation p d (note 1) 700 mw channel temperature t ch 150 c storage temperature t stg ? 55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on an fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit v (br) dss i d = -1 ma, v gs = 0 -20 ? ? drain-source breakdown voltage v (br) dsx i d = -1 ma, v gs = + 8 v -12 ? ? v drain cutoff current i dss v ds = -20 v, v gs = 0 ? ? -10 a gate leakage current i gss v gs = 8 v, v ds = 0 ? ? 1 a gate threshold voltage v th v ds = -3 v, i d = -1 ma -0.3 ? -1.0 v forward transfer admittance ? y fs ? v ds = -3 v, i d = -1 a (note 2) 2.4 4 ? s i d = -1.0 a, v gs = -4 v (note 2) ? 88 127 i d = -0.5 a, v gs = -2.5 v (note 2) ? 120 168 drain-source on-resistance r ds (on) i d = -0.2 a, v gs = -1.8 v (note 2) ? 172 297 m input capacitance c iss ? 335 ? output capacitance c oss ? 70 ? reverse transfer capacitance c rss v ds = -10 v, v gs = 0, f = 1 mhz ? 56 ? pf turn-on time t on ? 20 ? switching time turn-off time t off v dd = -10 v, i d = -1a, v gs = 0 ~ -2.5 v, r g = 4.7 ? 20 ? ns drain-source forward voltage v dsf i d = 2.3 a, v gs = 0 (note 2) ? 0.85 1.2 v note 2: pulse test unit: mm weight: 10 mg (typ.) smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
switching time test circuit (a) test circuit (b) v in marking equivalent circuit (top view) notice on usage v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d = -1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th . (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) take this into consideration when using the device. ) handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing , and containers and other objects that come into direct contact with devices should be made of antistatic materials. (c) v out 1 2 3 1 2 3 jj2 t on 90% 10% 0 v 90% 10% t o t r t f v ds ( on ) v dd -2.5 v v dd = ? 10 v r g = 4.7 duty Q 1% v in : t r , t f < 5 ns common source ta = 25c in 0 v dd out r g r l ? 2.5 v 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com SSM3J304T smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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